N-Channel MOSFET, 10.6 A, 60 V, 8-Pin MLP8 FDMS5672
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications.
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 10.6 A |
Maximum Drain Source Resistance | 12 mΩ |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 2.5 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | MLP8 |
Pin Count | 8 |
Series | UltraFET |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 32 nC @ 10 V |
Width | 6mm |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 8 ns |
Forward Transconductance - Min: | 26 S |
Id - Continuous Drain Current: | 10.6 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | Power-56-8 |
Pd - Power Dissipation: | 2.5 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 45 nC |
Rds On - Drain-Source Resistance: | 11.5 mOhms |
Rise Time: | 17 ns |
Series: | FDMS5672 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | UltraFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | Power MOSFET |
Typical Turn-Off Delay Time: | 22 ns |
Typical Turn-On Delay Time: | 16 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Вес, г | 5 |
Техническая документация
Datasheet
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Световые индикаторы Daier
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