FQA40N25, Транзистор: N-MOSFET

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Номенклатурный номер: 8012444124

Артикул: FQA40N25

Транзисторы

Описание Транзистор: N-MOSFET

Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	30
Fall Time:	165 ns
Id - Continuous Drain Current:	40 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-3PN-3
Packaging:	Tube
Part # Aliases:	FQA40N25_NL
Pd - Power Dissipation:	280 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	110 nC
Rds On - Drain-Source Resistance:	70 mOhms
REACH - SVHC:	Details
Rise Time:	580 ns
Series:	FQA40N25
Subcategory:	MOSFETs
Technology:	Si
Tradename:	QFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	120 ns
Typical Turn-On Delay Time:	70 ns
Vds - Drain-Source Breakdown Voltage:	250 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	40 A
Maximum Drain Source Resistance	70 mΩ
Maximum Drain Source Voltage	250 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	280 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-3PN
Pin Count	3
Series	QFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	85 nC @ 10 V
Width	5mm
Вес, г	5.17