IKW15N120BH6XKSA1, Trans IGBT Chip N-CH 1200V 30A 200W 3-Pin(3+Tab) TO-247 Tube

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460 руб.

Мин. кол-во для заказа 80 шт.

от 257 шт. — 430 руб.

от 673 шт. — 394 руб.

80 шт. на сумму 36 800 руб.

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от 9 200 руб. × 4 платежа

Номенклатурный номер: 8013382538

Артикул: IKW15N120BH6XKSA1

Semiconductor - Discrete > Power Discrete > Transistor - IGBT Component

Описание Транзистор IGBT, 1,2кВ, 15А, 100Вт, TO247-3 Характеристики

Maximum Collector Emitter Voltage	1200 V
Maximum Continuous Collector Current	30 A
Maximum Gate Emitter Voltage	25 V, ±20 V
Maximum Power Dissipation	200 W
Package Type	PG-TO247-3
Pin Count	3
Current - Collector (Ic) (Max)	30A
Current - Collector Pulsed (Icm)	60A
Gate Charge	92nC
IGBT Type	Trench Field Stop
Input Type	Standard
Manufacturer	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-40В°C ~ 175В°C(TJ)
Package / Case	TO-247-3
Packaging	Tube
Part Status	Active
Power - Max	200W
Reverse Recovery Time (trr)	340ns
Series	TrenchStopв(ў
Supplier Device Package	PG-TO247-3-41
Switching Energy	700ВµJ(on), 550ВµJ(off)
Td (on/off) @ 25В°C	18ns/240ns
Test Condition	600V, 15A, 22 Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 15A
Voltage - Collector Emitter Breakdown (Max)	1200V
Case	TO247-3
Collector current	15A
Collector-emitter voltage	1.2kV
Features of semiconductor devices	integrated anti-parallel diode
Gate-emitter voltage	±20V
Kind of package	tube
Mounting	THT
Power dissipation	100W
Pulsed collector current	60A
Technology	TRENCHSTOP™ 6
Type of transistor	IGBT
Вес, г	1

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