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см. техническую документацию
см. техническую документацию
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Описание
EiceDRIVER™ Gate Driver ICs Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.
Технические параметры
| Brand: | Infineon Technologies |
| Configuration: | Non-Inverting |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 25 ns |
| Logic Type: | CMOS |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +125 C |
| Maximum Turn-Off Delay Time: | 50 ns |
| Maximum Turn-On Delay Time: | 50 ns |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Drivers: | 2 Driver |
| Number of Outputs: | 2 Output |
| Operating Supply Current: | 100 uA |
| Output Current: | 3.3 A |
| Output Voltage: | 6 V to 20 V |
| Package/Case: | SOIC-8 |
| Pd - Power Dissipation: | 625 mW |
| Product Category: | Gate Drivers |
| Product Type: | Gate Drivers |
| Product: | IGBT, MOSFET Gate Drivers |
| Propagation Delay - Max: | 95 ns |
| Rise Time: | 25 ns |
| Shutdown: | No Shutdown |
| Subcategory: | PMIC-Power Management ICs |
| Supply Voltage - Max: | 20 V |
| Supply Voltage - Min: | 6 V |
| Technology: | Si |
| Type: | Low-Side |
| Вес, г | 0.54 |
Техническая документация
Datasheet
pdf, 370 КБ
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем
