P-Channel MOSFET, 5 A, 30 V, 6-Pin TSMT-6 RQ6E050ATTCR

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Номенклатурный номер: 8014472249

Артикул: RQ6E050ATTCR

Бренд: Rohm

Semiconductors\Discrete Semiconductors\MOSFETs

P-канал 30V 5A (Ta) 1,25W (Ta) поверхностный монтаж TSMT6 (SC-95)

Channel Mode	Enhancement
Channel Type	P
Forward Diode Voltage	1.2V
Maximum Continuous Drain Current	5 A
Maximum Drain Source Resistance	38 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-18 V, +18 V
Maximum Gate Threshold Voltage	2.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.25 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	TSMT-6
Pin Count	6
Series	RQ6E050AT
Transistor Configuration	Dual Base
Typical Gate Charge @ Vgs	20.8 nC @ 10 V
Width	1.8mm
Base Product Number	RQ6E050 ->
Current - Continuous Drain (Id) @ 25В°C	5A (Ta)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
ECCN	EAR99
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	20.8nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	940pF @ 15V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Operating Temperature	150В°C (TJ)
Other Related Documents	http://rohmfs.rohm.com/en/techdata_basic/transisto
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max)	1.25W (Ta)
Rds On (Max) @ Id, Vgs	27mOhm @ 5A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Simulation Models	http://rohmfs.rohm.com/en/products/library/spice/d
Supplier Device Package	TSMT6 (SC-95)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA
RoHS Compliant	Yes
Вес, г	1