IKW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole

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1 120 руб.

Кратность заказа 30 шт.

Добавить в корзину 30 шт. на сумму 33 600 руб.

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от 8 400 руб. × 4 платежа

Альтернативные предложения1

Номенклатурный номер: 8014472367

Артикул: IKW30N60TFKSA1

Semiconductors\Discrete Semiconductors\IGBTs

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology.

Channel Type	N
Energy Rating	2.1mJ
Gate Capacitance	1630pF
Maximum Collector Emitter Voltage	600 V
Maximum Continuous Collector Current	45 A
Maximum Gate Emitter Voltage	±20V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	187 W
Minimum Operating Temperature	-40 °C
Mounting Type	Through Hole
Package Type	TO-247
Pin Count	3
Transistor Configuration	Single
Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	600 V
Collector-Emitter Saturation Voltage	1.5 V
Configuration	Single
Continuous Collector Current at 25 C	60 A
Continuous Collector Current Ic Max	60 A
Factory Pack Quantity	240
Gate-Emitter Leakage Current	100 nA
Height	20.95 mm
Length	15.9 mm
Manufacturer	Infineon
Mounting Style	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Part # Aliases	IKW30N60TFKSA1 IKW30N60TXK SP000054887
Pd - Power Dissipation	187 W
Product Category	IGBT Transistors
RoHS	Details
Series	TRENCHSTOP
Technology	Si
Tradename	TRENCHSTOP
Unit Weight	1.340411 oz
Width	5.3 mm