IXYT25N250CHV IGBT, 95 A 2500 V, 3-Pin TO-268HV, Surface Mount
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Описание
Semiconductors\Discrete Semiconductors\IGBTs
Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat)
Технические параметры
Maximum Collector Emitter Voltage | 2500 V |
Maximum Continuous Collector Current | 95 A |
Maximum Gate Emitter Voltage | ±20 V, ±30V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 937 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Transistors | 1 |
Package Type | TO-268HV |
Pin Count | 3 |
Transistor Configuration | Single |
California Prop 65 | Warning Information |
Current - Collector (Ic) (Max) | 95A |
Current - Collector Pulsed (Icm) | 235A |
ECCN | EAR99 |
Gate Charge | 147nC |
HTSUS | 8541.29.0095 |
Input Type | Standard |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Operating Temperature | -55В°C ~ 175В°C (TJ) |
Package | Tube |
Package / Case | TO-268-3, DВіPak (2 Leads + Tab), TO-268AA |
Power - Max | 937W |
REACH Status | REACH Unaffected |
Reverse Recovery Time (trr) | 34ns |
RoHS Status | ROHS3 Compliant |
Series | XPTв„ў -> |
Supplier Device Package | TO-268HV (IXYT) |
Switching Energy | 8.3mJ (on), 7.3mJ (off) |
Td (on/off) @ 25В°C | 15ns/230ns |
Test Condition | 1250V, 25A, 5Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 25A |
Voltage - Collector Emitter Breakdown (Max) | 2500V |
Brand: | IXYS |
Collector- Emitter Voltage VCEO Max: | 2.5 kV |
Collector-Emitter Saturation Voltage: | 4 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 95 A |
Continuous Collector Current Ic Max: | 95 A |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Gate-Emitter Leakage Current: | +/-100 nA |
Manufacturer: | IXYS |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Package / Case: | TO-268HV-2 |
Packaging: | Tube |
Pd - Power Dissipation: | 937 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | High Voltage |
Subcategory: | IGBTs |
Technology: | Si |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 281 КБ
Datasheet IXYT25N250CHV
pdf, 280 КБ
Datasheet IXYT25N250CHV
pdf, 273 КБ
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем