SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK C3M0280090J
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 11 A |
| Maximum Drain Source Resistance | 280 mΩ |
| Maximum Drain Source Voltage | 900 V |
| Maximum Gate Source Voltage | -8 V, 18 V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 50 W |
| Minimum Gate Threshold Voltage | 1.8V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TO-263-7 |
| Pin Count | 7 |
| Transistor Configuration | Single |
| Transistor Material | SiC |
| Typical Gate Charge @ Vgs | 9.5 nC @ 4/15V |
| Width | 9.12mm |
| Brand | Cree, Inc. |
| Configuration | Single |
| Fall Time | 4 ns |
| Forward Transconductance - Min | 3.1 S |
| Id - Continuous Drain Current | 11 A |
| Manufacturer | Cree, Inc. |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | D2PAK-7 |
| Packaging | Tube |
| Pd - Power Dissipation | 50 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 9.5 nC |
| Rds On - Drain-Source Resistance | 385 mOhms |
| Rise Time | 6.5 ns |
| RoHS | Details |
| Technology | SiC |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 11 ns |
| Typical Turn-On Delay Time | 10.5 ns |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Vgs - Gate-Source Voltage | -8 V, +18 V |
| Vgs th - Gate-Source Threshold Voltage | 1.8 V |
| Case | D2PAK-7 |
| Drain current | 11A |
| Drain-source voltage | 900V |
| Features of semiconductor devices | Kelvin terminal |
| Gate charge | 9.5nC |
| Gate-source voltage | -8…19V |
| Kind of channel | enhanced |
| Mounting | SMD |
| On-state resistance | 0.28Ω |
| Polarisation | unipolar |
| Power dissipation | 50W |
| Reverse recovery time | 20ns |
| Type of transistor | N-MOSFET |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 869 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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