IHW40N120R5XKSA1 IGBT, 80 A 1200 V, 3-Pin PG-TO247-3

Изображения служат только для ознакомления,
см. техническую документацию

1 110 руб.

Кратность заказа 30 шт.

30 шт. на сумму 33 300 руб.

Плати частями
от 8 325 руб. × 4 платежа

Номенклатурный номер: 8014554574

Артикул: IHW40N120R5XKSA1

Semiconductors\Discrete Semiconductors\IGBTs

The Infineon insulated-gate bipolar transistor with powerful monolithic body diode with low forward voltage designed for soft commutation.

Maximum Collector Emitter Voltage	1200 V
Maximum Continuous Collector Current	80 A
Maximum Gate Emitter Voltage	±20 V, ±25 V
Maximum Power Dissipation	394 W
Package Type	PG-TO247-3
Pin Count	3
Base Product Number	IHW40N120 ->
Current - Collector (Ic) (Max)	80A
Current - Collector Pulsed (Icm)	120A
ECCN	EAR99
Gate Charge	310nC
HTSUS	8541.29.0095
IGBT Type	Trench Field Stop
Input Type	Standard
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-40В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power - Max	394W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	TrenchStopв„ў ->
Supplier Device Package	PG-TO247-3
Switching Energy	1.6mJ (off)
Td (on/off) @ 25В°C	-/420ns
Test Condition	600V, 40A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max)	1200V
Channel Type	N
Collector Current (DC)	80(A)
Configuration	Single
Gate to Emitter Voltage (Max)	±20(V)
Mounting	Through Hole
Operating Temperature (Max)	175C
Operating Temperature (Min)	-40C
Operating Temperature Classification	Automotive
Packaging	Rail/Tube
Rad Hardened	No
Вес, г	1