FF600R12KT4HOSA1 Dual IGBT Module, 600 A 1200 V AG-62MM
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см. техническую документацию
см. техническую документацию
63 140 руб.
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от 15 785 руб. × 4 платежа
Описание
Semiconductors\Discrete Semiconductors\IGBTs
1200V Dual IGBT ModulesInfineon 1200V Dual IGBT Modules are EconoDUAL™ 3 1200V, 900A dual TRENCHSTOP™ IGBT7 Modules with emitter controlled 7 diode, NTC, and PressFIT contact technology. The IGBT Modules offer a higher inverter output current for the same frame size and avoidance of paralleling. The Infineon 1200V Dual IGBT Modules provide an easy and reliable assembly with a high inter-connection reliability.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.75 V |
| Configuration: | Dual |
| Continuous Collector Current at 25 C: | 600 A |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis |
| Packaging: | Tray |
| Part # Aliases: | FF600R12KT4 SP005342974 |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Channel Type | N |
| Configuration | Dual |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 600 A |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 2 |
| Package Type | AG-62MM |
| Transistor Configuration | Series |
Техническая документация
Datasheet
pdf, 498 КБ
Datasheet FF600R12KT4HOSA1
pdf, 488 КБ
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем
