FQD12N20LTM

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310 руб.

от 2 шт. — 240 руб.

1 шт. на сумму 310 руб.

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Номенклатурный номер: 8014705312

Электроэлемент

Описание Транзистор N-MOSFET, полевой, 200В, 5,7А, 55Вт, DPAK Характеристики

Brand	ON Semiconductor/Fairchild
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	2500
Fall Time	120 ns
Forward Transconductance - Min	11.6 S
Height	2.39 mm
Id - Continuous Drain Current	9 A
Length	6.73 mm
Manufacturer	ON Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-252-3
Packaging	Reel
Part # Aliases	FQD12N20LTM_NL
Pd - Power Dissipation	2.5 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	280 mOhms
Rise Time	190 ns
RoHS	Details
Series	FQD12N20L
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	60 ns
Typical Turn-On Delay Time	15 ns
Unit Weight	0.009184 oz
Vds - Drain-Source Breakdown Voltage	200 V
Vgs - Gate-Source Voltage	20 V
Width	6.22 mm
Channel Type	N
Maximum Continuous Drain Current	9 A
Maximum Drain Source Resistance	280 mΩ
Maximum Drain Source Voltage	200 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	1V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	16 nC @ 5 V
Вес, г	0.375