STGD4M65DF2, TRENCH GATE FIELD-STOP IGBT, M S
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см. техническую документацию
см. техническую документацию
1394 шт., срок 6-8 недель
150 руб.
Мин. кол-во для заказа 2 шт.
от 10 шт. —
130 руб.
от 100 шт. —
106 руб.
от 500 шт. —
100.69 руб.
2 шт.
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Альтернативные предложения2
Описание
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Технические параметры
Brand: | STMicroelectronics |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.6 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 8 A |
Continuous Collector Current Ic Max: | 8 A |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Gate-Emitter Leakage Current: | +/-250 uA |
Manufacturer: | STMicroelectronics |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | DPAK-3(TO-252-3) |
Pd - Power Dissipation: | 68 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | STGD4M65DF2 |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 420 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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