S29GL512T10TFI020
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3 990 руб.
1 шт.
на сумму 3 990 руб.
Плати частями
от 999 руб. × 4 платежа
от 999 руб. × 4 платежа
Описание
Электроэлемент
FLASH MEMORY, 512MBIT, TSOP-56; Flash Memory Type:Parallel NOR; Memory Size:512Mbit; Flash Memory Configuration:64M x 8bit; IC Interface Type:CFI, Parallel; Memory Case Style:TSOP; No. of Pins:56Pins; Clock Frequency:-; Access Time:100ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:3V Parallel NOR Flash Memories; RoHS Phthalates Compliant:Yes; MSL:MSL 3 - 168 hours; SVHC:No SVHC (12-Jan-2017)
Технические параметры
| Access Time | 100ns |
| Manufacturer | Cypress Semiconductor Corp |
| Memory Format | FLASH |
| Memory Interface | Parallel |
| Memory Size | 512Mb(64M x 8) |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature | -40В°C ~ 85В°C(TA) |
| Package / Case | 56-TFSOP(0.724", 18.40mm Width) |
| Packaging | Tray |
| Part Status | Active |
| Series | GL-T |
| Supplier Device Package | 56-TSOP |
| Technology | FLASH-NOR |
| Voltage - Supply | 2.7V ~ 3.6V |
| Write Cycle Time - Word, Page | 60ns |
| Architecture: | Sector |
| Brand: | Infineon Technologies |
| Data Bus Width: | 8 bit/16 bit |
| Factory Pack Quantity: Factory Pack Quantity: | 910 |
| Interface Type: | Parallel |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +85 C |
| Memory Size: | 512 Mbit |
| Memory Type: | NOR |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Organization: | 64 M x 8/32 M x 16 |
| Package / Case: | TSOP-56 |
| Packaging: | Tray |
| Product Category: | NOR Flash |
| Product Type: | NOR Flash |
| Series: | S29GL512T |
| Speed: | 100 ns |
| Standard: | Common Flash Interface(CFI) |
| Subcategory: | Memory & Data Storage |
| Supply Voltage - Max: | 3.6 V |
| Supply Voltage - Min: | 2.7 V |
| Timing Type: | Asynchronous |
Техническая документация
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
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