BUK7J1R4-40HX, Транзистор: N-MOSFET; Trench; полевой; 40В; 190А; Idm: 600А; 395Вт
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1110 шт. со склада г.Москва, срок 3-4 недели
610 руб.
от 10 шт. —
430 руб.
от 30 шт. —
371 руб.
от 100 шт. —
311.32 руб.
1 шт.
на сумму 610 руб.
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от 0 руб. × 4 платежа
Альтернативные предложения1
Описание
Automotive MOSFETs
Nexperia Automotive MOSFETs comprise a range of AEC-Q101-qualified devices that meet the stringent standards set by the automotive industry. These Nexperia automotive devices are designed for an operating environment far more hostile than power MOSFETs used in home and portable applications and are suitable for thermally demanding environments due to a +175°C rating.
Nexperia Automotive MOSFETs comprise a range of AEC-Q101-qualified devices that meet the stringent standards set by the automotive industry. These Nexperia automotive devices are designed for an operating environment far more hostile than power MOSFETs used in home and portable applications and are suitable for thermally demanding environments due to a +175°C rating.
Технические параметры
| Brand: | Nexperia |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1500 |
| Fall Time: | 21 ns |
| Id - Continuous Drain Current: | 120 A |
| Manufacturer: | Nexperia |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | LFPAK-56E-4 |
| Part # Aliases: | 934660082115 |
| Pd - Power Dissipation: | 395 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 126 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 740 uOhms |
| Rise Time: | 17 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | Trench 9 |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 43 ns |
| Typical Turn-On Delay Time: | 19 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.4 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 258 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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