MMBT2907A_R1_00001, 10nA 60V 225mW 100@150mA,10V 600mA 200MHz 1.6V@500mA,50mA PNP -55-~+150-@(Tj) SOT-23 Bipolar Transistors - BJT

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5360 шт. со склада г.Москва, срок 3-4 недели

11 руб.

Кратность заказа 20 шт.

от 200 шт. — 7 руб.

от 600 шт. — 5.30 руб.

от 3000 шт. — 4.60 руб.

20 шт. на сумму 220 руб.

Плати частями
от 0 руб. × 4 платежа

Альтернативные предложения3

Номенклатурный номер: 8015870822

Артикул: MMBT2907A_R1_00001

Transistors/Thyristors\Bipolar (BJT)

Collector Current (Ic)	600mA
Collector Cut-Off Current (Icbo)	50nA
Collector-Emitter Breakdown Voltage (Vceo)	60V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	1.6V@500mA, 50mA
DC Current Gain (hFE@Ic,Vce)	100@150mA, 10V
Power Dissipation (Pd)	225mW
Transistor Type	PNP
Transition Frequency (fT)	200MHz
Collector-Emitter Breakdown Voltage	60V
Maximum DC Collector Current	600mA
Pd - Power Dissipation	225mW
Brand:	Panjit
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	60 V
Collector-Emitter Saturation Voltage:	1.6 V
Configuration:	Single
Continuous Collector Current:	-600 mA
DC Collector/Base Gain hfe Min:	100 at-150 mA, -10 V
DC Current Gain hFE Max:	300 at-150 mA, -10 V
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	200 MHz
Manufacturer:	Panjit
Maximum DC Collector Current:	600 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Pd - Power Dissipation:	225 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	GPT-02TP
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Вес, г	0.03