RGWS00TS65DGC13 Single Collector, Single Emitter, Single Gate IGBT, 88 A 650 V TO-247GE

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118 шт., срок 6 недель

1 740 руб.

Кратность заказа 2 шт.

2 шт. на сумму 3 480 руб.

Плати частями
от 870 руб. × 4 платежа

Альтернативные предложения2

Номенклатурный номер: 8015966769

Артикул: RGWS00TS65DGC13

Бренд: Rohm

Semiconductors\Discrete Semiconductors\IGBTs

ROHM Field Stop Trench IGBT is an IGBT with high speed fast switching which contributes to higher efficiency of applications.

Configuration	Single Collector, Single Emitter, Single Gate
Maximum Collector Emitter Voltage	650 V
Maximum Continuous Collector Current	88 A
Maximum Gate Emitter Voltage	±30V
Maximum Power Dissipation	245 W
Number of Transistors	1
Package Type	TO-247GE
Brand:	ROHM Semiconductor
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Configuration:	Single
Continuous Collector Current at 25 C:	88 A
Continuous Collector Current Ic Max:	54 A
Factory Pack Quantity: Factory Pack Quantity:	30
Gate-Emitter Leakage Current:	200 nA
Manufacturer:	ROHM Semiconductor
Maximum Gate Emitter Voltage:	-30 V, 30 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Package / Case:	TO-247GE-3
Packaging:	Tube
Part # Aliases:	RGWS00TS65D
Pd - Power Dissipation:	245 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Вес, г	1