1EDN7512GXTMA1, Драйвер FET-IGBT PG-WSON-6
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Описание
Experience the Difference in Power
Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ superjunction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on their individual design/system requirements from the currently broadest silicon-based SJ MOSFET portfolio in the industry. As one of the few manufacturers mastering all of the main three power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering consists of silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions, available to choose from, range from exceptional in price-performance through unrivaled in robustness to best-in-class devices. This enables customers to build the most efficient, environmentally friendliest, and most sustainable applications.
Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ superjunction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on their individual design/system requirements from the currently broadest silicon-based SJ MOSFET portfolio in the industry. As one of the few manufacturers mastering all of the main three power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering consists of silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions, available to choose from, range from exceptional in price-performance through unrivaled in robustness to best-in-class devices. This enables customers to build the most efficient, environmentally friendliest, and most sustainable applications.
Технические параметры
Brand: | Infineon Technologies |
Configuration: | Inverting, Non-Inverting |
Factory Pack Quantity: Factory Pack Quantity: | 4000 |
Fall Time: | 4.5 ns |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Maximum Turn-Off Delay Time: | 25 ns |
Maximum Turn-On Delay Time: | 25 ns |
Minimum Operating Temperature: | -40 C |
Mounting Style: | SMD/SMT |
Number of Drivers: | 1 Driver |
Number of Outputs: | 1 Output |
Output Current: | 8 A |
Package/Case: | WSON-6 |
Part # Aliases: | 1EDN7512G SP001491590 |
Product Category: | Gate Drivers |
Product Type: | Gate Drivers |
Product: | IGBT, MOSFET Gate Drivers |
Rise Time: | 6.5 ns |
Series: | 1EDN |
Subcategory: | PMIC-Power Management ICs |
Supply Voltage - Max: | 20 V |
Supply Voltage - Min: | 4.5 V |
Technology: | Si |
Tradename: | EiceDRIVER |
Type: | Low-Side |
IC Case / Package | WSON |
Задержка Выхода | 19нс |
Задержка по Входу | 19нс |
Количество Выводов | 6вывод(-ов) |
Количество Каналов | 1канал(-ов) |
Конфигурация Привода | Низкая Сторона |
Линейка Продукции | EiceDRIVER 1EDN |
Максимальная Рабочая Температура | 150°C |
Максимальное Напряжение Питания | 20В |
Минимальная Рабочая Температура | -40°C |
Минимальное Напряжение Питания | 4.5В |
Стиль Корпуса Привода | WSON |
Тип переключателя питания | GaN HEMT, IGBT, MOSFET |
Ток истока | 4А |
Ток стока | 8А |
Fall Time | 4.5ns |
Logic Type | CMOS |
Output Current | 8 A |
Package Type | PG-WSON-6-1 |
Pin Count | 6 |
Supply Voltage | 4.2V |
Вес, г | 0.45 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем