KDT00030TR, Фототранзистор, 5мм, p макс 880нм, 5В, 50°
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см. техническую документацию
см. техническую документацию
240 руб.
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150 руб.
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Описание
TRANSISTOR, PHOTO, 630NM, CHIPLED-2; Wavelength Typ:630nm; Viewing Angle:-; Power Consumption:-; No. of Pins:2Pins; Transistor Case Style:ChipLED; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 4 - 72 hour
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Collector- Emitter Voltage VCEO Max | 6 V |
| Collector-Emitter Saturation Voltage | 4.6 V |
| Dark Current | 0.1 uA |
| Factory Pack Quantity | 3000 |
| Height | 0.6 mm |
| Length | 1.7 mm |
| Light Current | 1100 uA |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | SMD/SMT |
| Package / Case | SMD |
| Packaging | Reel |
| Peak Wavelength | 630 nm |
| Product | Phototransistors |
| Product Category | Phototransistors |
| RoHS | Details |
| Series | KDT00030 |
| Type | Chip |
| Unit Weight | 0.00454 oz |
| Wavelength | 630 nm |
| Width | 0.8 mm |
| Maximum Dark Current | 100nA |
| Maximum Light Current | 1100µA |
| Maximum Wavelength Detected | 630nm |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Number of Pins | 2 |
| Polarity | NPN |
| Spectral Range of Sensitivity | Maximum of 630 nm |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 145 КБ
Документация
pdf, 1378 КБ
