IXXH75N60B3D1, Транзистор IGBT, GenX3™, 600В, 75А, 750Вт, TO247-3

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1 550 руб.

от 10 шт. — 1 300 руб.

от 30 шт. — 1 130 руб.

от 100 шт. — 903.75 руб.

1 шт. на сумму 1 550 руб.

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от 389 руб. × 4 платежа

Номенклатурный номер: 8017544766

Артикул: IXXH75N60B3D1

750W 160A 600V TO-247-3 IGBTs ROHS

Collector Current (Ic)	160A
Collector Cut-Off Current (Ices@Vce)	25uA@600V
Collector-Emitter Breakdown Voltage (Vces)	600V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)	1.6V@60A, 15V
Diode Forward Voltage (Vf@If)	2.7V@30A
Diode Reverse Recovery Time (Trr)	25ns
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.5V@250uA
Input Capacitance (Cies@Vce)	3.29nF@25V
Operating Temperature	-55℃~+175℃@(Tj)
Power Dissipation (Pd)	750W
Pulsed Collector Current (Icm)	300A
Total Gate Charge (Qg@Ic,Vge)	-
Turn?off Delay Time (Td(off))	118ns
Turn?off Switching Loss (Eoff)	1.5mJ
Turn?on Delay Time (Td(on))	35ns
Turn?on Switching Loss (Eon)	1.7mJ
Type	-
Brand:	IXYS
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.85 V
Configuration:	Single
Continuous Collector Current at 25 C:	160 A
Factory Pack Quantity:	30
Manufacturer:	IXYS
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Packaging:	Tube
Pd - Power Dissipation:	750 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Вес, г	6