NTR5198NLT1G, Транзистор: N-MOSFET; 60В; 1,6А; 600мВт; SOT23

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19 руб.

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Номенклатурный номер: 8017970429

Артикул: NTR5198NLT1G

Транзисторы

Описание Транзистор: N-MOSFET; 60В; 1,6А; 600мВт; SOT23 Характеристики

Вид	MOSFET
Тип	полевой
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	2.2 A
Maximum Drain Source Resistance	155 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	2.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	900 mW
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	5.1 nC @ 10 V
Width	1.4mm
Brand:	onsemi
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	2 ns
Forward Transconductance - Min:	3 S
Id - Continuous Drain Current:	2.2 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOT-23-3
Pd - Power Dissipation:	1.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	5.1 nC
Rds On - Drain-Source Resistance:	142 mOhms
Rise Time:	7 ns
Series:	NTR5198NL
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	5 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Вес, г	0.031