ADRF5141BCCZN, RF Switch ICs High Power T/R Switch with Limiter 6 GHz

ADRF5141BCCZN is a silicon, transmit and receive switch with limiter. This reflective, SPDT switch manufactured in the silicon process. This is used in transmit and receive applications with an integrated power limiter on the receive path. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls. It requires no additional driver circuitry, making it an ideal alternative to gallium nitride (GaN) and PIN diode-based switches. Application includes X-band communications and radars, electronic warfare, satellite communications, GaN and PIN diode replacement.

• 20-terminal land grid array [LGA], temperature range from -40°C to +105°C
• High-power transmit and receive switch with an integrated power limiter on receive path
• Frequency range from 6GHz to 12GHz, reflective 50 ohm design
• Low insertion loss, TX to ANT is 0.9dB at 8 to 11GHz, ANT to RX is 1.4dB at 8 to 11GHz
• High isolation is 55dB typical for TX to RX when TX selected
• RX flat leakage is 17dBm, high linearity, input P0.1dB at TX arm is 41dBm
• Fast switching time is 50ns, fast response and recovery time is <10ns
• Dual-supply, with no low-frequency spurious
• Positive control interface is CMOS-/LVTTL-compatible