Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	15 ns
Forward Transconductance - Min:	2 S
Id - Continuous Drain Current:	1.3 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SSOT-3
Part # Aliases:	FDN352AP_NL
Pd - Power Dissipation:	500 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Qg - Gate Charge:	1.9 nC
Rds On - Drain-Source Resistance:	180 mOhms
Rise Time:	15 ns
Series:	FDN352AP
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	10 ns
Typical Turn-On Delay Time:	4 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	1.3
Maximum Drain Source Resistance (mOhm)	180@10V
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±25
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	500
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	TMOS
Product Category	Power MOSFET
Standard Package Name	SOT
Supplier Package	SOT-23
Typical Fall Time (ns)	1
Typical Gate Charge @ Vgs (nC)	1.4@4.5V
Typical Input Capacitance @ Vds (pF)	150@15V
Typical Rise Time (ns)	15
Typical Turn-Off Delay Time (ns)	10
Typical Turn-On Delay Time (ns)	4
Maximum Continuous Drain Current	1.3 A
Maximum Drain Source Resistance	180 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-25 V, +25 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	500 mW
Minimum Gate Threshold Voltage	0.8V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	SOT-23
Series	PowerTrench
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	1.4 nC @ 4.5 V
Width	1.4mm
Case	SuperSOT-3
Drain current	-1.3A
Drain-source voltage	-30V
Features of semiconductor devices	logic level
Gate charge	1.9nC
Gate-source voltage	±25V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	ONSEMI
On-state resistance	0.4Ω
Polarisation	unipolar
Power dissipation	0.5W
Technology	PowerTrench®
Type of transistor	P-MOSFET
Вес, г	0.02

FDN352AP, Транзистор P-MOSFET, полевой, -30В, -1,3А, 500мВт, SuperSOT-3

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