FQT7N10LTF, Транзистор: N-MOSFET, полевой, 100В, 1,36А, 2Вт, SOT223
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Описание
Транзисторы
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
Технические параметры
| Вид | MOSFET |
| Тип | полевой |
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 4000 |
| Fall Time | 50 ns |
| Forward Transconductance - Min | 2.75 S |
| Height | 1.8 mm |
| Id - Continuous Drain Current | 1.7 A |
| Length | 6.5 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-223-4 |
| Packaging | Reel |
| Part # Aliases | FQT7N10LTF_NL |
| Pd - Power Dissipation | 2 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 350 mOhms |
| Rise Time | 100 ns |
| RoHS | Details |
| Series | FQT7N10L |
| Technology | Si |
| Tradename | QFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 17 ns |
| Typical Turn-On Delay Time | 9 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 3.5 mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Fall Time: | 50 ns |
| Forward Transconductance - Min: | 2.75 S |
| Id - Continuous Drain Current: | 1.7 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-223-4 |
| Part # Aliases: | FQT7N10LTF_NL |
| Pd - Power Dissipation: | 2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 6 nC |
| Rds On - Drain-Source Resistance: | 350 mOhms |
| REACH - SVHC: | Details |
| Rise Time: | 100 ns |
| Series: | FQT7N10L |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | QFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 17 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 1.7 A |
| Maximum Drain Source Resistance | 350 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Power Dissipation | 2 W |
| Minimum Gate Threshold Voltage | 1V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-223 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 4.6 nC @ 5 V |
| Вес, г | 0.124 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
