G2R50MT33K, SiC MOSFETs 3300V 50mohm TO-247-4 G2R SiC MOSFET

G2R50MT33K, SiC MOSFETs 3300V 50mohm TO-247-4 G2R SiC MOSFET
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см. техническую документацию
312 шт., срок 5-7 недель
Бесплатная доставка 5Post, СДЭК и Я.Доставка
70 780 руб.
от 10 шт.61 870 руб.
от 30 шт.60 330 руб.
1 шт. на сумму 70 780 руб.
Плати частями
от 0 руб. × 4 платежа
Номенклатурный номер: 8018974813
Артикул: G2R50MT33K

Описание

Unclassified
SiC MOSFETs

GeneSiC Semiconductor"s next-generation G3R™ and G2R™ SiC (Silicon Carbide) MOSFETs offer R DS(ON) levels ranging from 12mΩ to 1000mΩ. These devices feature industry-leading performance, robustness, and quality for efficiency and system reliability in automotive and industrial applications. These MOSFETs deliver high efficiency, fast switching frequency, an increased power density, reduced ringing (EMI), and compact size. The G3R and G2R SiC MOSFETs are offered in optimized low-inductance discrete packages (SMD and through-hole). These devices are highly optimized for power system designs that require elevated efficiency levels at all operating temperatures and ultra-fast switching speeds with very low losses.

Технические параметры

Brand: GeneSiC Semiconductor
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 30
Fall Time: 18 ns
Id - Continuous Drain Current: 63 A
Manufacturer: GeneSiC Semiconductor
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: TO-247-4
Packaging: Tube
Pd - Power Dissipation: 536 W
Product Category: MOSFET
Product Type: MOSFET
Product: MOSFET
Qg - Gate Charge: 340 nC
Rise Time: 37 ns
Series: G2R
Subcategory: MOSFETs
Technology: SiC
Transistor Polarity: N-Channel
Transistor Type: MOSFET
Type: SiC MOSFET
Typical Turn-Off Delay Time: 32 ns
Typical Turn-On Delay Time: 74 ns
Vds - Drain-Source Breakdown Voltage: 3.3 kV
Vgs - Gate-Source Voltage: -5 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 3.5 V
Вес, г 1

Техническая документация

Datasheet
pdf, 1188 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов

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