UJ3N120065K3S
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от 1 054 руб. × 4 платежа
Альтернативные предложения1
Номенклатурный номер: 8020347089
Бренд: Qorvo Inc.
Описание
UJ3N Normally-On JFET Transistors
UnitedSiC / Qorvo UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (R DS(ON) ), as low as 25mΩ, and low gate charge (QG), allowing for low conduction and reduced switching loss. The device's normally-on characteristics with low R DS(ON) at VGS = 0V are also ideal for current protection circuits without the need for active control. The UJ3N JFET transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes, " giving all of the advantages of wide band-gap technology with very high operating voltages and easy gate drive.
UnitedSiC / Qorvo UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (R DS(ON) ), as low as 25mΩ, and low gate charge (QG), allowing for low conduction and reduced switching loss. The device's normally-on characteristics with low R DS(ON) at VGS = 0V are also ideal for current protection circuits without the need for active control. The UJ3N JFET transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes, " giving all of the advantages of wide band-gap technology with very high operating voltages and easy gate drive.
Технические параметры
| Brand: | Qorvo/UnitedSiC |
| Configuration: | Single |
| Drain-Source Current at Vgs=0: | 5 uA |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Id - Continuous Drain Current: | 34 A |
| Manufacturer: | Qorvo |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 254 W |
| Product Category: | JFET |
| Product Type: | JFETs |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 90 mOhms |
| Series: | UJ3N |
| Subcategory: | Transistors |
| Technology: | SiC |
| Tradename: | Sic JFET |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs - Gate-Source Breakdown Voltage: | -20 V to 3 V |
Техническая документация
Datasheet
pdf, 260 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые с управляющим PN-переходом (JFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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