PJA3406_R1_00001, SOT-23 MOSFETs
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см. техническую документацию
см. техническую документацию
470 шт. со склада г.Москва, срок 3-4 недели
27 руб.
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Альтернативные предложения1
Описание
Transistors/Thyristors\MOSFETs
Power MOSFETs for Wireless Charging TransmittersPANJIT Power MOSFETs for Wireless Charging Transmitters provide an advanced solution for the wireless chargers to work properly and efficiently. These wireless charging transmitters are designed to transfer the electromagnetic field to the battery receiver of its application. The power MOSFETs are assembled in a low-profile package that saves space while delivering similar on-resistance and thermal resistance. These devices feature low switching losses, high switching frequency operation, low operating temperature, and low gate drive losses. The power MOSFETs are ideally used in wireless charging pads, wireless charging sockets, wireless charging cases, and wireless charging stations.
Технические параметры
| Continuous Drain Current (Id) | 4.4A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 48mΩ@4.4A, 10V |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.1V@250uA |
| Input Capacitance (Ciss@Vds) | 235pF@15V |
| Power Dissipation (Pd) | 1.25W |
| Total Gate Charge (Qg@Vgs) | 5.8nC@10V |
| Type | 1PCSNChannel |
| Brand: | Panjit |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 28 ns |
| Id - Continuous Drain Current: | 4.4 A |
| Manufacturer: | Panjit |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 1.25 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 5.8 nC |
| Rds On - Drain-Source Resistance: | 48 mOhms |
| Rise Time: | 39 ns |
| Series: | NFET-30TMN |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 23 ns |
| Typical Turn-On Delay Time: | 3 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Вес, г | 0.03 |
Техническая документация
Datasheet PJA3406_R1_00001
pdf, 202 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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