R6077VNZ4C13, MOSFETs TO247 650V 231A N-CH MOSFET
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см. техническую документацию
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1200 шт., срок 5-7 недель
3 690 руб.
от 10 шт. —
3 090 руб.
от 25 шт. —
2 820 руб.
от 50 шт. —
2 650.74 руб.
1 шт.
на сумму 3 690 руб.
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от 924 руб. × 4 платежа
от 924 руб. × 4 платежа
Описание
Unclassified
600V 4th Gen PrestoMOS™ Super Junction MOSFETsROHM Semiconductor 600V 4th Gen PrestoMOS™ Super Junction MOSFETs utilize original patented technology to accelerate the parasitic diode, achieving ultra-fast reverse recovery characteristics to achieve low power consumption. The PrestoMOS design enables a reduction in power loss of about 58% at light loads when compared with IGBT implementations. Additionally, raising the reference voltage needed to turn ON the MOSFET prevents self-turn-ON, which is one of the main causes of loss. The optimized built-in parasitic diode improves the soft recovery index specific to Super Junction MOSFETs, which reduces noise that can lead to malfunction.
Технические параметры
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 53 ns |
| Id - Continuous Drain Current: | 77 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220FM-3 |
| Packaging: | Tube |
| Part # Aliases: | R6077VNZ4 |
| Pd - Power Dissipation: | 781 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 108 nC |
| Rds On - Drain-Source Resistance: | 51 mOhms |
| Rise Time: | 62 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 148 ns |
| Typical Turn-On Delay Time: | 55 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 6.5 V |
| Вес, г | 1 |
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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