IGW50N65F5, IGBT 650V 80A 305W PG-TO247-3
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см. техническую документацию
см. техническую документацию
900 руб.
Кратность заказа 5 шт.
от 50 шт. —
820 руб.
от 150 шт. —
789 руб.
5 шт.
на сумму 4 500 руб.
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от 1 125 руб. × 4 платежа
от 1 125 руб. × 4 платежа
Описание
TRENCHSTOP™ 5 F5 Discrete IGBTs Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages, and high voltage DC-DC topologies commonly found in applications like uninterruptible power supplies (UPS), inverter welding machines, and switch-mode power supplies. The 650V TRENCHSTOP 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP 5 H5 family.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | SP000973426 IGW50N65F5FKSA1 |
| Pd - Power Dissipation: | 305 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1944 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
