79LV2040RPFK-20, Электрически стираемое перепрограммируемое постоянное запоминающее устройство 20 Мегабит (512K x 40 бит) EEPROM MC

79LV2040RPFK-20
Memories for Space - Rad Hard 20 Megabit (512K x 40-Bit) Low Voltage EEPROM MCM Memory

512k x 40-bit EEPROM MCM
∙RAD-PAK® radiation-hardened against natural
∙ space radiation
∙ Total dose hardness:
- >100 krad (Si)
- Dependent upon orbit
∙ Excellent Single event effects
- SELTH > 84 MeV/mg/cm2
- SEU > 37 MeV/mg/cm2 read mode
- SEU = 11.4 MeV/mg/cm2 write mode
∙ High endurance
- 10,000 cycles (Page Programming Mode)
- 10 year data retention
∙ Page Write Mode: 128 Dword Page
∙ High Speed:
- 200 and 250 ns maximum access times
∙ Automatic programming
- 15 ms automatic Page/Dword write
∙ Low power dissipation
- 100 mW/MHz active current
- 1.5 mW standby current