S3M-13-F

Фото 1/4 S3M-13-F
Изображения служат только для ознакомления,
см. техническую документацию
21 руб.
Мин. кол-во для заказа 18 шт.
18 шт. на сумму 378 руб.
Плати частями
от 0 руб. × 4 платежа
Номенклатурный номер: 8024029970
Бренд: DIODES INC.

Описание

Diode Standard 1000V 3A Surface Mount SMC

Технические параметры

Base Product Number S3M ->
Capacitance @ Vr, F 40pF @ 4V, 1MHz
Current - Average Rectified (Io) 3A
Current - Reverse Leakage @ Vr 10ВµA @ 1000V
Diode Type Standard
ECCN EAR99
HTSUS 8541.10.0080
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature - Junction -65В°C ~ 150В°C
Package Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case DO-214AB, SMC
REACH Status REACH Affected
RoHS Status ROHS3 Compliant
Speed Standard Recovery >500ns, > 200mA (Io)
Supplier Device Package SMC
Voltage - DC Reverse (Vr) (Max) 1000V
Voltage - Forward (Vf) (Max) @ If 1.15V @ 3A
If - Forward Current 3A
Peak Reverse Voltage 1kV
Vf - Forward Voltage 1.15V @ 3A
Brand: Diodes Incorporated
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 3000
If - Forward Current: 3 A
Ir - Reverse Current: 10 uA
Manufacturer: Diodes Incorporated
Max Surge Current: 100 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -65 C
Mounting Style: SMD/SMT
Package / Case: SMC-2
Product Category: Rectifiers
Product Type: Rectifiers
Product: Rectifiers
Series: S3M-13
Subcategory: Diodes & Rectifiers
Termination Style: SMD/SMT
Type: Standard Recovery Rectifiers
Vf - Forward Voltage: 1.15 V
Vr - Reverse Voltage: 1 kV
Diode Configuration Single
Diode Technology Silicon Junction
Maximum Diode Capacitance 40pF
Maximum Forward Current 3A
Maximum Forward Voltage Drop 1.15V
Maximum Operating Temperature +150 °C
Maximum Reverse Voltage 1000V
Minimum Operating Temperature -65 °C
Number of Elements per Chip 1
Package Type SMC
Pin Count 2
Width 6.22mm
Вес, г 1

Техническая документация

Дополнительная информация

Калькуляторы группы «Диоды выпрямительные»
Типы корпусов импортных диодов