CSD88537ND
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см. техническую документацию
см. техническую документацию
71 руб.
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Описание
Описание MOSFET транзистор SOIC8
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 19 ns |
| Id - Continuous Drain Current: | 16 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 2.1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 14 nC |
| Rds On - Drain-Source Resistance: | 15 mOhms |
| Rise Time: | 15 ns |
| Series: | CSD88537ND |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 5 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Factory Pack Quantity | 2500 |
| Fall Time | 19 ns |
| Height | 1.75 mm |
| Id - Continuous Drain Current | 16 A |
| Length | 4.9 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | SOIC-8 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 2.1 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 14 nC |
| Rds On - Drain-Source Resistance | 15 mOhm |
| Rise Time | 15 ns |
| RoHS | Details |
| Series | CSD88537ND |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 5 ns |
| Typical Turn-On Delay Time | 6 ns |
| Unit Weight | 0.019048 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.6 V |
| Width | 3.9 mm |
| Вес, г | 560 |
Техническая документация
Документация
pdf, 444 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
