IKQ75N120CS6XKSA1 Single IGBT, 150 A 1200 V, 3-Pin PG-TO247
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от 17 250 руб. × 4 платежа
от 17 250 руб. × 4 платежа
Описание
Semiconductors\Discrete Semiconductors\IGBTs
The Infineon 5 A IGBT with anti-parallel diode is Very soft, fast recovery anti-parallel diode and has high ruggedness, temperature stable behaviour.
Технические параметры
Channel Type | N |
Configuration | Single |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Continuous Collector Current | 150 A |
Maximum Gate Emitter Voltage | 25V |
Maximum Power Dissipation | 880 W |
Number of Transistors | 1 |
Package Type | PG-TO247 |
Pin Count | 3 |
Transistor Configuration | Single |
Automotive | No |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Maximum Collector-Emitter Voltage (V) | 1200 |
Maximum Continuous Collector Current (A) | 150 |
Maximum Gate Emitter Leakage Current (uA) | 0.6 |
Maximum Gate Emitter Voltage (V) | ±20 |
Maximum Operating Temperature (°C) | 175 |
Maximum Power Dissipation (mW) | 880 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Through Hole |
Packaging | Tube |
Part Status | Active |
PCB changed | 3 |
PPAP | No |
Supplier Package | TO-247 |
Tab | Tab |
Technology | Trench Stop |
Typical Collector Emitter Saturation Voltage (V) | 1.85 |
Current - Collector (Ic) (Max) | 150A |
Current - Collector Pulsed (Icm) | 300A |
Gate Charge | 530nC |
IGBT Type | Trench Field Stop |
Input Type | Standard |
Manufacturer | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -40В°C ~ 175В°C(TJ) |
Package / Case | TO-247-3 |
Power - Max | 880W |
Reverse Recovery Time (trr) | 440ns |
Series | TrenchStopв(ў |
Supplier Device Package | PG-TO247-3-46 |
Switching Energy | 5.15mJ(on), 2.95mJ(off) |
Td (on/off) @ 25В°C | 34ns/300ns |
Test Condition | 600V, 75A, 4Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 75A |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Техническая документация
Datasheet
pdf, 2016 КБ
Datasheet IKQ75N120CS6XKSA1
pdf, 2072 КБ
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем