STGWA25M120DF3, Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3

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30 шт. со склада г.Москва, срок 3-4 недели

1 280 руб.

от 10 шт. — 1 010 руб.

от 30 шт. — 868 руб.

1 шт. на сумму 1 280 руб.

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Номенклатурный номер: 8025881816

Артикул: STGWA25M120DF3

IGBT Trench Field Stop 1200V 50A 375W сквозное отверстие TO-247, длинные выводы

Base Product Number	STGWA25 ->
Current - Collector (Ic) (Max)	50A
Current - Collector Pulsed (Icm)	100A
ECCN	EAR99
Gate Charge	85nC
HTSUS	8541.29.0095
IGBT Type	Trench Field Stop
Input Type	Standard
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power - Max	375W
REACH Status	REACH Unaffected
Reverse Recovery Time (trr)	265ns
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-247 Long Leads
Switching Energy	850ВµJ (on), 1.3mJ (off)
Td (on/off) @ 25В°C	28ns/150ns
Test Condition	600V, 25A, 15Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max)	1200V
Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.85 V
Configuration:	Single
Continuous Collector Current at 25 C:	50 A
Continuous Collector Current Ic Max:	25 A
Factory Pack Quantity:	600
Gate-Emitter Leakage Current:	250 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	375 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Вес, г	6.14