P-Channel MOSFET, 6 A, 20 V, 3-Pin SOT-346 RQ5C060BCTCL
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2975 шт., срок 6 недель
75 руб.
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от 471 руб. × 4 платежа
от 471 руб. × 4 платежа
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Low-Gate Drive Voltage MOSFETsROHM Low-Gate Drive Voltage MOSFETs have a wide drive type of 0.9 volts to 10 volts. This wide drive type range offers support for applications ranging from a small signal to high power. These MOSFETs come in a wide choice of sizes that are as small as the microminiature package (0604 sizes). This variety of sizes help to contribute to area space saving in an application. These MOSFETs offer superior high-speed switching and low On-Resistance.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Resistance | 51 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Maximum Gate Threshold Voltage | 1.2V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1 W |
| Minimum Gate Threshold Voltage | 0.5V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-346 |
| Pin Count | 3 |
| Series | RQ5C060BC |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 19.2 nC @ 4.5 V |
| Width | 1.8mm |
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 72 ns |
| Forward Transconductance - Min: | 9 S |
| Id - Continuous Drain Current: | 6 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-346-3 |
| Part # Aliases: | RQ5C060BC |
| Pd - Power Dissipation: | 1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 19.2 nC |
| Rds On - Drain-Source Resistance: | 16.1 mOhms |
| Rise Time: | 38 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 105 ns |
| Typical Turn-On Delay Time: | 13 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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