Категория	Транзистор
Тип	биполярный
Вид	NPN

Brand	Diodes Incorporated
Collector- Base Voltage VCBO	80 V
Collector- Emitter Voltage VCEO Max	30 V
Collector-Emitter Saturation Voltage	350 mV
Configuration	Single
Continuous Collector Current	7 A
DC Collector/Base Gain Hfe Min	30 at 20 A, 2 V
DC Current Gain HFE Max	100
Emitter- Base Voltage VEBO	6 V
Factory Pack Quantity	1000
Gain Bandwidth Product FT	100 MHz
Manufacturer	Diodes Incorporated
Maximum DC Collector Current	20 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	SOT-223-4
Packaging	Cut Tape or Reel
Pd - Power Dissipation	3 W
Product Category	Bipolar Transistors-BJT
Product Type	BJTs-Bipolar Transistors
Series	FZT849
Subcategory	Transistors
Transistor Polarity	NPN
Maximum Collector Base Voltage	80 V
Maximum Collector Emitter Voltage	30 V
Maximum Emitter Base Voltage	6 V
Maximum Operating Frequency	100 MHz
Maximum Power Dissipation	3 W
Minimum DC Current Gain	100
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-223
Pin Count	3+Tab
Transistor Configuration	Single
Transistor Type	NPN
Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	80 V
Collector- Emitter Voltage VCEO Max:	30 V
Collector-Emitter Saturation Voltage:	350 mV
Configuration:	Single
Continuous Collector Current:	7 A
DC Collector/Base Gain hfe Min:	30 at 20 A, 2 V
DC Current Gain hFE Max:	100
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	7 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-223-4
Pd - Power Dissipation:	3 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	FZT849
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.15

FZT849TA, Транзистор: NPN, биполярный, 30В, 7А, 1,6Вт, SOT223

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