MT60B2G8HB-56B:G, DRAM DDR5 16G 2GX8 FBGA Y32B

• 16Gb DDR5 SDRAM IC
• 2Gig x 8 configuration, packaging style is 82-ball 9.0mm x 11.0mm FBGA
• Timing cycle time is 0.357ns at CL = 46
• VDD (VDDQ) = 1.1V (NOM), operating temperature is 0°C to 95°C
• VPP= 1.8V (NOM), on-die, internal, adjustable VREF generation for DQ, CA, CS
• 1.1V pseudo open-drain I/O, 1cycle/2 cycle command structure
• 2N mode, multi-purpose command (MPC)
• CS/CA training mode, on-die ECC (bounded fault), JEDEC JESD-79.5 compliant
• ECC transparency and error scrub, decision feedback equalization (DFE)
• Loopback mode, sPPR and hPPR capability, per-DRAM addressability