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NDC7001C, Транзистор N/P-MOSFET, полевой, 60/-60В, 0,51/0,34А, 0,96Вт

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87 руб.

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Номенклатурный номер: 8030703054

Артикул: NDC7001C

Бренд: ON Semiconductor***

Описание

Транзисторы

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Технические параметры

Brand	ON Semiconductor/Fairchild
Channel Mode	Enhancement
Configuration	1 N-Channel, 1 P-Channel
Factory Pack Quantity	3000
Fall Time	8 ns, 10 ns
Height	1.1 mm
Id - Continuous Drain Current	510 mA
Length	2.9 mm
Manufacturer	ON Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	SSOT-6
Packaging	Reel
Part # Aliases	NDC7001C_NL
Pd - Power Dissipation	960 mW
Product	MOSFET Small Signal
Product Category	MOSFET
Rds On - Drain-Source Resistance	1 Ohms
Rise Time	8 ns, 10 ns
RoHS	Details
Series	NDC7001C
Technology	Si
Transistor Polarity	N-Channel, P-Channel
Transistor Type	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time	14 ns, 8 ns
Typical Turn-On Delay Time	2.8 ns, 3.2 ns
Unit Weight	0.00127 oz
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	20 V
Width	1.6 mm
Channel Type	N, P
Maximum Continuous Drain Current	340 mA, 510 mA
Maximum Drain Source Resistance	4 Ω, 10 Ω
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Power Dissipation	960 mW
Minimum Gate Threshold Voltage	1V
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	SOT-23
Pin Count	6
Transistor Configuration	Isolated
Transistor Material	Si
Typical Gate Charge @ Vgs	1.1 nC @ 10 V, 1.6 nC @ 10 V
Case	SuperSOT-6
Drain current	0.51/0.34A
Drain-source voltage	60/-60V
Gate charge	1.5/2.2nC
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	reel, tape
Kind of transistor	complementary pair
Mounting	SMD
On-state resistance	4/10Ω
Polarisation	unipolar
Power dissipation	0.96W
Type of transistor	N/P-MOSFET
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	8 ns, 10 ns
Id - Continuous Drain Current:	510 mA, 340 mA
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package/Case:	SSOT-6
Part # Aliases:	NDC7001C_NL
Pd - Power Dissipation:	960 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signals
Qg - Gate Charge:	1.5 nC, 2.2 nC
Rds On - Drain-Source Resistance:	1 Ohms
Rise Time:	8 ns, 10 ns
Series:	NDC7001C
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel, P-Channel
Transistor Type:	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:	14 ns, 8 ns
Typical Turn-On Delay Time:	2.8 ns, 3.2 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V, 3.5 V
Вес, г	0.03