N-Channel MOSFET, 34 A, 750 V Tube SCT4045DRC15
![N-Channel MOSFET, 34 A, 750 V Tube SCT4045DRC15](https://static.chipdip.ru/lib/810/DOC044810151.jpg)
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см. техническую документацию
см. техническую документацию
440 шт., срок 6 недель
3 320 руб.
1 шт.
на сумму 3 320 руб.
Плати частями
от 830 руб. × 4 платежа
от 830 руб. × 4 платежа
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The ROHM SCT4045DR is a Sic Mosfet that contributes to miniaturization and low power consumption of applications this is a 4th generation product that achieves industry leading low on-resistance without sacrificing short-circuit withstand time this is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of Sic Mosfet this series has about 40 percent reduction in on-resistance and about 50 percent reduction in switching loss compared to conventional products the 15V gate-source voltage makes application design easier.
Технические параметры
Channel Type | N |
Maximum Continuous Drain Current | 34 A |
Maximum Drain Source Voltage | 750 V |
Mounting Type | Through Hole |
Package Type | Tube |
Brand: | ROHM Semiconductor |
Channel Mode: | Enhancement |
Factory Pack Quantity: Factory Pack Quantity: | 450 |
Fall Time: | 10 ns |
Id - Continuous Drain Current: | 34 A |
Manufacturer: | ROHM Semiconductor |
Maximum Operating Temperature: | +175 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-247-4L |
Packaging: | Tube |
Part # Aliases: | SCT4045DR |
Pd - Power Dissipation: | 115 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 63 nC |
Rds On - Drain-Source Resistance: | 45 mOhms |
Rise Time: | 16 ns |
Subcategory: | MOSFETs |
Technology: | SiC |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 27 ns |
Typical Turn-On Delay Time: | 5.1 ns |
Vds - Drain-Source Breakdown Voltage: | 750 V |
Vgs - Gate-Source Voltage: | -4 V, +21 V |
Vgs th - Gate-Source Threshold Voltage: | 4.8 V |
Техническая документация
Datasheet
pdf, 1388 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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