N-Channel MOSFET, 34 A, 750 V Tube SCT4045DRC15

N-Channel MOSFET, 34 A, 750 V Tube SCT4045DRC15
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см. техническую документацию
440 шт., срок 6 недель
3 320 руб.
1 шт. на сумму 3 320 руб.
Плати частями
от 830 руб. × 4 платежа
Альтернативные предложения1
Номенклатурный номер: 8030969822
Артикул: SCT4045DRC15
Бренд: Rohm

Описание

Semiconductors\Discrete Semiconductors\MOSFETs
The ROHM SCT4045DR is a Sic Mosfet that contributes to miniaturization and low power consumption of applications this is a 4th generation product that achieves industry leading low on-resistance without sacrificing short-circuit withstand time this is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of Sic Mosfet this series has about 40 percent reduction in on-resistance and about 50 percent reduction in switching loss compared to conventional products the 15V gate-source voltage makes application design easier.

Технические параметры

Channel Type N
Maximum Continuous Drain Current 34 A
Maximum Drain Source Voltage 750 V
Mounting Type Through Hole
Package Type Tube
Brand: ROHM Semiconductor
Channel Mode: Enhancement
Factory Pack Quantity: Factory Pack Quantity: 450
Fall Time: 10 ns
Id - Continuous Drain Current: 34 A
Manufacturer: ROHM Semiconductor
Maximum Operating Temperature: +175 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-247-4L
Packaging: Tube
Part # Aliases: SCT4045DR
Pd - Power Dissipation: 115 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 63 nC
Rds On - Drain-Source Resistance: 45 mOhms
Rise Time: 16 ns
Subcategory: MOSFETs
Technology: SiC
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 27 ns
Typical Turn-On Delay Time: 5.1 ns
Vds - Drain-Source Breakdown Voltage: 750 V
Vgs - Gate-Source Voltage: -4 V, +21 V
Vgs th - Gate-Source Threshold Voltage: 4.8 V

Техническая документация

Datasheet
pdf, 1388 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов

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