IKW20N65ET7XKSA1 IGBT 650 V PG-TO247-3
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Описание
Semiconductors\Discrete Semiconductors\IGBTs
The Infineon Hard-switching 650 V, 20 A TRENCHSTOP IGBT7 discrete in TO-247 package with soft EC7 diode inside.
Технические параметры
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | PG-TO247-3 |
| Collector Current (Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Diode Reverse Recovery Time (Trr) | 70ns |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.65V@15V, 20A |
| Input Capacitance (Cies@Vce) | - |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Power Dissipation (Pd) | 136W |
| Pulsed Collector Current (Icm) | 60A |
| Total Gate Charge (Qg@Ic,Vge) | 128nC |
| Turn?off Delay Time (Td(off)) | 210ns |
| Turn?off Switching Loss (Eoff) | 0.36mJ |
| Turn?on Delay Time (Td(on)) | 16ns |
| Turn?on Switching Loss (Eon) | 0.36mJ |
| Type | FS(Field Stop) |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.35 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 40 A |
| Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | IKW20N65ET7 SP005348286 |
| Pd - Power Dissipation: | 136 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
Техническая документация
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем
