N-Channel MOSFET, 17.5 A, 100 V, 3-Pin DPAK RD3P175SNTL1

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2475 шт., срок 6 недель

620 руб.

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5 шт. на сумму 3 100 руб.

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Альтернативные предложения2

Номенклатурный номер: 8030984176

Артикул: RD3P175SNTL1

Бренд: Rohm

Semiconductors\Discrete Semiconductors\MOSFETs

The ROHM power MOSFET with low on resistance, suitable for switching, it is drive circuits can be simple and Pb-free plating and RoHS compliant.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	17.5 A
Maximum Drain Source Voltage	100 V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	TO-252
Pin Count	3
Transistor Material	Si
Brand:	ROHM Semiconductor
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	2500
Fall Time:	50 ns
Forward Transconductance - Min:	5 S
Id - Continuous Drain Current:	17.5 A
Manufacturer:	ROHM Semiconductor
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	DPAK-3(TO-252-3)
Part # Aliases:	RD3P175SN
Pd - Power Dissipation:	20 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	24 nC
Rds On - Drain-Source Resistance:	105 mOhms
Rise Time:	25 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V

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