N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220AB RX3L07BBGC16

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1000 шт., срок 6 недель

540 руб.

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Альтернативные предложения2

Номенклатурный номер: 8031014581

Артикул: RX3L07BBGC16

Бренд: Rohm

Semiconductors\Discrete Semiconductors\MOSFETs

The ROHM power MOSFET with low-on resistance and high power package, suitable for switching. Pb free plating

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	105 A
Maximum Drain Source Voltage	60 V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220AB
Pin Count	3
Transistor Material	Si
Brand:	ROHM Semiconductor
Channel Mode:	Enhancement
Fall Time:	27 ns
Id - Continuous Drain Current:	105 A
Manufacturer:	ROHM Semiconductor
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220AB-3
Packaging:	Tube
Part # Aliases:	RX3L07BBG
Pd - Power Dissipation:	89 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	16.7 nC
Rds On - Drain-Source Resistance:	6.5 mOhms
Rise Time:	12 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	72 ns
Typical Turn-On Delay Time:	21 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V

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