NDS0605, Транзистор P-MOSFET, полевой, -60В, -0,18А, 0,36Вт, SOT23

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28 руб.

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Номенклатурный номер: 8031066581

Артикул: NDS0605

Транзисторы

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology.

Brand	ON Semiconductor/Fairchild
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	6.3 ns
Height	1.2 mm
Id - Continuous Drain Current	-180 mA
Length	2.9 mm
Manufacturer	ON Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-23-3
Packaging	Cut Tape
Part # Aliases	NDS0605_NL
Pd - Power Dissipation	360 mW
Product	MOSFET Small Signal
Product Category	MOSFET
Rds On - Drain-Source Resistance	5 Ohms
Rise Time	6.3 ns
RoHS	Details
Series	NDS0605
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Type	MOSFET
Typical Turn-Off Delay Time	10 ns
Typical Turn-On Delay Time	2.5 ns
Unit Weight	0.000282 oz
Vds - Drain-Source Breakdown Voltage	-60 V
Vgs - Gate-Source Voltage	20 V
Width	1.3 mm
Channel Type	P
Maximum Continuous Drain Current	180 mA
Maximum Drain Source Resistance	5 Ω
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Power Dissipation	360 mW
Minimum Gate Threshold Voltage	1V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	1.8 nC @ 10 V
Case	SOT23
Drain current	-0.18A
Drain-source voltage	-60V
Gate charge	2.5nC
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	reel, tape
Mounting	SMD
On-state resistance	5Ω
Polarisation	unipolar
Power dissipation	0.36W
Type of transistor	P-MOSFET
Вес, г	0.04