MT53E2G32D4DE-046 WT:C, DRAM LPDDR4 64G 2GX32 FBGA QDP Z42N

MT53E2G32D4DE-046 WT: C is a LPDDR4X/LPDDR4 SDRAM. The 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.

• 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL=16.32)
• Directed per-bank refresh for concurrent bank operation and ease of command scheduling
• Up to 8.5GB/s per die x16 channel, on-chip temperature sensor to control self refresh rate
• Partial-array self refresh (PASR), selectable output drive strength (DS), clock-stop capability
• 8GB (64Gb) total density, 4266Mb/s data rate per pin
• 200-ball TFBGA package
• Operating temperature rating range from -25°C to +85°C