N-Channel MOSFET, 26 A, 1200 V TO-247-4L SCT4062KRC15
![N-Channel MOSFET, 26 A, 1200 V TO-247-4L SCT4062KRC15](https://static.chipdip.ru/lib/810/DOC044810151.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
450 шт., срок 6 недель
2 170 руб.
Кратность заказа 450 шт.
450 шт.
на сумму 976 500 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Альтернативные предложения2
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The ROHM SCT4062KRC15 is a Sic Mosfet that contributes to miniaturization and low power consumption of applications this is a 4th generation product that achieves industry leading low on-resistance without sacrificing short-circuit withstand time this is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of Sic Mosfet this series has about 40 percent reduction in on-resistance and about 50 percent reduction in switching loss compared to conventional products the 15V gate-source voltage makes application design easier.
Технические параметры
Channel Type | N |
Maximum Continuous Drain Current | 26 A |
Maximum Drain Source Voltage | 1200 V |
Mounting Type | Through Hole |
Package Type | TO-247-4L |
Brand: | ROHM Semiconductor |
Channel Mode: | Enhancement |
Factory Pack Quantity: Factory Pack Quantity: | 450 |
Fall Time: | 10 ns |
Forward Transconductance - Min: | 8.3 S |
Id - Continuous Drain Current: | 26 A |
Manufacturer: | ROHM Semiconductor |
Maximum Operating Temperature: | +175 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-247-4L |
Packaging: | Tube |
Part # Aliases: | SCT4062KR |
Pd - Power Dissipation: | 115 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 64 nC |
Rds On - Drain-Source Resistance: | 62 mOhms |
Rise Time: | 11 ns |
Subcategory: | MOSFETs |
Technology: | SiC |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 22 ns |
Typical Turn-On Delay Time: | 4.4 ns |
Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
Vgs - Gate-Source Voltage: | -4 V, +21 V |
Vgs th - Gate-Source Threshold Voltage: | 4.8 V |
Техническая документация
Datasheet
pdf, 1386 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.