N-Channel MOSFET, 26 A, 1200 V TO-247-4L SCT4062KRC15

N-Channel MOSFET, 26 A, 1200 V TO-247-4L SCT4062KRC15
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см. техническую документацию
450 шт., срок 6 недель
2 170 руб.
Кратность заказа 450 шт.
450 шт. на сумму 976 500 руб.
Плати частями
от 0 руб. × 4 платежа
Альтернативные предложения2
Номенклатурный номер: 8032856082
Артикул: SCT4062KRC15
Бренд: Rohm

Описание

Semiconductors\Discrete Semiconductors\MOSFETs
The ROHM SCT4062KRC15 is a Sic Mosfet that contributes to miniaturization and low power consumption of applications this is a 4th generation product that achieves industry leading low on-resistance without sacrificing short-circuit withstand time this is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of Sic Mosfet this series has about 40 percent reduction in on-resistance and about 50 percent reduction in switching loss compared to conventional products the 15V gate-source voltage makes application design easier.

Технические параметры

Channel Type N
Maximum Continuous Drain Current 26 A
Maximum Drain Source Voltage 1200 V
Mounting Type Through Hole
Package Type TO-247-4L
Brand: ROHM Semiconductor
Channel Mode: Enhancement
Factory Pack Quantity: Factory Pack Quantity: 450
Fall Time: 10 ns
Forward Transconductance - Min: 8.3 S
Id - Continuous Drain Current: 26 A
Manufacturer: ROHM Semiconductor
Maximum Operating Temperature: +175 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-247-4L
Packaging: Tube
Part # Aliases: SCT4062KR
Pd - Power Dissipation: 115 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 64 nC
Rds On - Drain-Source Resistance: 62 mOhms
Rise Time: 11 ns
Subcategory: MOSFETs
Technology: SiC
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 22 ns
Typical Turn-On Delay Time: 4.4 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs - Gate-Source Voltage: -4 V, +21 V
Vgs th - Gate-Source Threshold Voltage: 4.8 V

Техническая документация

Datasheet
pdf, 1386 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов

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