IKW75N65EL5XKSA1 IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
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см. техническую документацию
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1 730 руб.
Кратность заказа 30 шт.
Добавить в корзину 30 шт.
на сумму 51 900 руб.
Плати частями
от 12 975 руб. × 4 платежа
от 12 975 руб. × 4 платежа
Описание
Semiconductors\Discrete Semiconductors\IGBTs
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology.
Технические параметры
Channel Type | N |
Energy Rating | 7.22mJ |
Gate Capacitance | 12100pF |
Maximum Collector Emitter Voltage | 650 V |
Maximum Continuous Collector Current | 75 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 536 W |
Minimum Operating Temperature | -40 °C |
Mounting Type | Through Hole |
Package Type | TO-247 |
Pin Count | 3 |
Transistor Configuration | Single |
Collector Emitter Saturation Voltage | 1.1В |
Collector Emitter Voltage Max | 650В |
Continuous Collector Current | 80А |
Power Dissipation | 536Вт |
Количество Выводов | 3вывод(-ов) |
Линейка Продукции | TRENCHSTOP 5 |
Максимальная Рабочая Температура | 175 C |
Стиль Корпуса Транзистора | TO-247 |
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.1 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 80 A |
Factory Pack Quantity: Factory Pack Quantity: | 240 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | Infineon |
Maximum Gate Emitter Voltage: | -20 V, +20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Part # Aliases: | IKW75N65EL5 SP001174464 |
Pd - Power Dissipation: | 536 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | Trenchstop IGBT5 L5 |
Subcategory: | IGBTs |
Technology: | Si |
Tradename: | TRENCHSTOP |
Brand | Infineon Technologies |
Collector- Emitter Voltage VCEO Max | 650 V |
Collector-Emitter Saturation Voltage | 1.1 V |
Configuration | Single |
Continuous Collector Current at 25 C | 80 A |
Factory Pack Quantity | 240 |
Gate-Emitter Leakage Current | 100 nA |
Manufacturer | Infineon |
Mounting Style | Through Hole |
Package / Case | TO-247-3 |
Packaging | Tube |
Part # Aliases | IKW75N65EL5 SP001174464 |
Pd - Power Dissipation | 536 W |
Product Category | IGBT Transistors |
Qualification | AEC-Q100 |
RoHS | Details |
Series | TRENCHSTOP 5 L5 |
Technology | Si |
Tradename | TRENCHSTOP |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 1925 КБ
Datasheet IKW75N65EL5
pdf, 1927 КБ
Datasheet IKW75N65EL5XKSA1
pdf, 1830 КБ
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем