N-Channel MOSFET, 24 A, 600 V, 3-Pin D2PAK R6024ENJTL

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999000 шт., срок 6 недель

700 руб.

Кратность заказа 1000 шт.

1000 шт. на сумму 700 000 руб.

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Альтернативные предложения1

Номенклатурный номер: 8032956538

Артикул: R6024ENJTL

Бренд: Rohm

Semiconductors\Discrete Semiconductors\MOSFETs

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.

Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.5V
Maximum Continuous Drain Current	24 A
Maximum Drain Source Resistance	320 mΩ
Maximum Drain Source Voltage	600 V
Maximum Gate Source Voltage	±30 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	245 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Series	R6024ENJ
Transistor Configuration	Single
Typical Gate Charge @ Vgs	70 nC @ 10 V
Width	9.2mm
Brand:	ROHM Semiconductor
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	50 ns
Id - Continuous Drain Current:	24 A
Manufacturer:	ROHM Semiconductor
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-263-3
Part # Aliases:	R6024ENJ
Pd - Power Dissipation:	245 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	70 nC
Rds On - Drain-Source Resistance:	150 mOhms
Rise Time:	50 ns
Series:	Super Junction-MOS EN
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	180 ns
Typical Turn-On Delay Time:	35 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	2 V