FDS8949, Транзистор N-MOSFET x2, полевой, 40В, 6А, 2Вт, SO8, PowerTrench®
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Описание
Транзисторы
Fairchild Semiconductor provides solutions that solve complex challenges in the automotive market with a thorough command of quality, safety, and reliability standards.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Resistance | 29 mΩ |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOIC |
| Pin Count | 8 |
| Transistor Configuration | Isolated |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 7.7 nC @ 5 V |
| Width | 4mm |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Drain to Source Voltage (Vdss) | 40V |
| Family | Transistors-FETs, MOSFETs-Arrays |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel(Dual) |
| Gate Charge (Qg) @ Vgs | 11nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 955pF @ 20V |
| Manufacturer | Fairchild Semiconductor |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Package / Case | 8-SOIC(0.154", 3.90mm Width) |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Power - Max | 2W |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 6A, 10V |
| Series | PowerTrench® |
| Standard Package | 1 |
| Supplier Device Package | 8-SO |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Вес, г | 0.15 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
