IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

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Номенклатурный номер: 8409236664

Артикул: IXGH40N120B2D1

Semiconductors\Discrete Semiconductors\IGBTs

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.

Channel Type	N
Maximum Collector Emitter Voltage	1200 V
Maximum Continuous Collector Current	75 A
Maximum Gate Emitter Voltage	±20V
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Package Type	TO-247
Pin Count	3
Transistor Configuration	Single
Вес, г	2