N-Channel MOSFET, 73 A, 30 V, 8-Pin VSONP CSD17307Q5A
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
NexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 73 A |
| Maximum Drain Source Resistance | 17.3 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -8 V, +10 V |
| Maximum Gate Threshold Voltage | 1.8V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 3 W |
| Minimum Gate Threshold Voltage | 0.9V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | VSONP |
| Pin Count | 8 |
| Series | NexFET |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 4 nC @ 4.5 V |
| Width | 5mm |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 2.6 ns |
| Forward Transconductance - Min: | 66 S |
| Id - Continuous Drain Current: | 73 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 4 nC |
| Rds On - Drain-Source Resistance: | 10.5 mOhms |
| Rise Time: | 6.7 ns |
| Series: | CSD17307Q5A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 9.3 ns |
| Typical Turn-On Delay Time: | 4.6 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
