FCB290N80
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см. техническую документацию
см. техническую документацию
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Описание
МОП-транзистор Power МОП-транзистор, N-Channel, SUPERFET II, 800 V, 17 A, 290 mO, D2PAK
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 800 |
| Fall Time | 2.6 ns |
| Forward Transconductance - Min | 20 S |
| Height | 4.83 mm |
| Id - Continuous Drain Current | 17 A |
| Length | 10.67 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 212 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 58 nC |
| Rds On - Drain-Source Resistance | 290 mOhms |
| Rise Time | 14 ns |
| RoHS | Details |
| Series | FCB290N80 |
| Technology | Si |
| Tradename | SuperFET II |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 61 ns |
| Typical Turn-On Delay Time | 22 ns |
| Unit Weight | 0.046296 oz |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Vgs - Gate-Source Voltage | 20 V, 30 V |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Width | 9.65 mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 800 |
| Fall Time: | 2.6 ns |
| Forward Transconductance - Min: | 20 S |
| Id - Continuous Drain Current: | 17 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | D2PAK-3(TO-263-3) |
| Pd - Power Dissipation: | 212 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 58 nC |
| Rds On - Drain-Source Resistance: | 290 mOhms |
| Rise Time: | 14 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 61 ns |
| Typical Turn-On Delay Time: | 22 ns |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Техническая документация
Datasheet
pdf, 727 КБ
Datasheet FCB290N80
pdf, 729 КБ
